PART |
Description |
Maker |
DOM40S3R288 DOM40S3R080 |
40Pin Flash Disk Module Min.16MB ~ Max.512MB, True IDE Interface 40Pin盘模块Min.16MBMax.512MB,真IDE接口
|
Hanbit Electronics Co., Ltd.
|
K4T51043QB-ZCD5 K4T51163QB-GCD5 K4T51083QB-GCD5 K4 |
512Mb B-die DDR2 SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4H511638B-TC/LB3 |
DDR Sdram 512Mb B-die
|
Samsung Semiconductor
|
K4H510438 |
512Mb B-die DDR SDRAM Specification
|
Samsung semiconductor
|
K4H510438B-GC_LB3 K4H510438B-ZC_LA2 K4H510438B-ZC_ |
512MB B-DIE DDR SDRAM SPECIFICATION
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K4T51163QE K4T51083QE |
512Mb E-die DDR2 SDRAM Specification
|
Samsung semiconductor
|
K4H511638D-UCC K4H511638D-UC3 K4H510838D-LA2 K4H51 |
512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
K4S510832B-CL75 K4S510832B-UC75 K4S510432B-CL75 K4 |
512Mb B-die SDRAM Specification 512MB的乙芯片内存规格 32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
http:// Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
M393T6553CZA-CE7 M393T2950CZ3-CCC M393T2950CZ3-CD5 |
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb C-die 72-bit ECC
|
SAMSUNG[Samsung semiconductor]
|
M470L2923BN0-CA2 M470L6524BTU0-CLCC M470L2923BN0-C |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
AM29LV200BB-70DFC AM29LV200BB-70DWI AM29LV200BB-90 |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 70 ns, UUC43 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 90 ns, UUC43 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 60 ns, UUC43 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位56亩x 8-Bit/128亩x 16位).0伏的CMOS只,引导扇区快闪记忆体,修编模具1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位56x 8-Bit/128x 16位).0伏的CMOS只,引导扇区快闪记忆体,修编模具1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 120 ns, UUC43 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位256亩x 8-Bit/128亩x 16位).0伏的CMOS只,引导扇区快闪记忆体,修编模具1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位56亩x 8-Bit/128亩x 16位)3.0伏的CMOS只,引导扇区快闪记忆体,修编模具1
|
Advanced Micro Devices, Inc.
|